Transistor having ammonia free nitride between its gate electrode and gate insulation layers
US6545295B2 · kind B2 · utility
3Cited by
9References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2002 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | May 2, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor and a liquid crystal display panel are provided. These devices include a layer of ammonia-free silicon nitride formed between the gate and the gate insulator of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.