EEPROM tunnel window for program injection via P+ contacted inversion
US6545313B1 · kind B1 · utility
2Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2002 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Aug 2, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
An improved method for fabricating a tunnel oxide window for use in an EEPROM memory cell is provided so as to produce better programming endurance. A P+ implant is provided at the tunnel window edge. During the programming operation, the P+ contacted inversion layer is used instead of the program junction. As a result, there is eliminated the voltage drop in the program junction region so as to improve the efficiency of programming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.