Current detector utilizing hall effect
US6545457B2 · kind B2 · utility
85Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2001 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Jun 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A Hall-effect semiconductor device is formed on a metal-made baseplate, as of nickel-plated copper, via a magnetic layer of Permalloy or the like. Higher in magnetic permeability than the baseplate, the magnetic layer is designed to reduce the magnetic resistance of the flux path. A plastic encapsulation thoroughly encloses the semiconductor device, magnetic layer, and baseplate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.