Burn-in mode detect circuit for semiconductor device
US6546510B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 1999 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Jul 13, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/401
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A synchronous dynamic random access memory (SDRAM) is disclosed that includes an operational mode in which the functionality of the SDRAM can be tested under burn-in conditions. The SDRAM can be placed in a burn-in monitor mode in which burn-in information is provided at data outputs, in lieu of memory cell information. The burn-in monitor mode helps to ensure that the SDRAM functions are properly exercised during burn-in. The preferred embodiment includes a data buffer coupled to a data bus and a mode register. The mode register stores burn-in mode data. In a standard mode of operation, the data buffer couples the data bus to data outputs (D0-Dz). In a burn-in monitor mode of operation, the data buffer couples the burn-in mode data to the data outputs (D0-Dz).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.