Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
US6548333B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 12, 2001 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Jul 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
High electron mobility transistors (HEMTs) and methods of fabricating HEMTs are provided Devices according to embodiments of the present invention include a gallium nitride (GaN) channel layer and an aluminum gallium nitride (AlGaN) barrier layer on the channel layer. A first ohmic contact is provided on the barrier layer to provide a source electrode and a second ohmic contact is also provided on the barrier layer and is spaced apart from the source electrode to provide a drain electrode. A GaN-based cap segment is provided on the barrier layer between the source electrode and the drain electrode. The GaN-based cap segment has a first sidewall adjacent and spaced apart from the source electrode and may have a second sidewall adjacent and spaced apart from the drain electrode. A non-ohmic contact is provided on the GaN-based cap segment to provide a gate contact. The gate contact has a first sidewall which is substantially aligned with the first sidewall of the GaN-based cap segment. The gate contact extends only a portion of a distance between the first sidewall and the second sidewall of the GaN-based cap segment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.