Method of producing oxide dielectric element, and memory and semiconductor device using the element
US6548342B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1999 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Feb 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/689
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The temperature at which an oxide dielectric thin film is formed can be made lower than conventional by reducing the concentration of oxygen in an atmosphere for forming the thin film. As a result, there can be formed an oxide dielectric thin film which has a crystal structure preferentially oriented at a crystal plane allowing a polarization axis to be directed in the vertical direction, which eliminates any reaction with an electrode material, and controls the growth of crystal grains. The use of such an oxide dielectric thin film can provide an oxide dielectric element having a high spontaneous polarization and a small coercive field. Consequently, it is possible to achieve a dielectric element having a high density of integration for detecting reading and writing operations, and a semiconductor device using the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.