Method of fabricating a ferroelectric memory cell

US6548343B1 · kind B1 · utility

Assignee

• Agilent Technologies Texas Instruments Incorporated · US

Inventors

• Scott R. Summerfelt · Dallas, US
• Theodore S. Moise · Dallas, US
• Guoqiang Xing · Plano, US
• Luigi Colombo · Dallas, US
• Tomoyuki Sakoda · Ibaraki, JP
• Stephen Roy Gilbert · San Francisco, US
• Alvin Leng Sun Loke · Fort Collins, US
• Shawming Ma · Sunnyvale, US
• Rahim Kavari · Campbell, US
• Laura Wills-Mirkarimi · Sunol, US
• Jun Amano · Hillsborough, US

Key dates

• Filing date: Oct 31, 2000
• Grant date: Apr 15, 2003
• Expiry date: Jul 13, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/688

Abstract

An embodiment of the instant invention is a method of fabricating a ferroelectric capacitor which is situated over a structure, the method comprising the steps of: forming a bottom electrode on the structure (124 of FIG. 1), the bottom electrode having a top surface and sides; forming a capacitor dielectric (126 of FIG. 1) comprised of a ferroelectric material on the bottom electrode, the capacitor dielectric having a top surface and sides; forming a top electrode (128 and 130 of FIG. 1) on the capacitor dielectric, the top electrode having a top surface and sides, the ferroelectric capacitor is comprised of the bottom electrode, the capacitor dielectric, and the top electrode; forming a barrier layer (118 and 120 of FIG. 1) on the side of the bottom electrode, the side of the capacitor dielectric, and the side of the top electrode; forming a dielectric layer on the barrier layer and the structure, the dielectric having a top surface and a bottom surface; and performing a thermal step for a duration at a temperature between 400 and 900 C. in an ambient comprised of a gas selected from the group consisting of: argon, nitrogen, and a combination thereof, the step of performing a ther…