Method for the etchback of a conductive material
US6548415B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2001 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Sep 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for etchback of a conductive layer in a contact via (contact hole). The method described is typically used in the formation of a conductive plug within the contact hole. The method includes a first etchback in which the conductive layer is etched back; a buffer (i.e., transition) step during which the etch rate of the conductive layer is reduced; and a second etchback in which the amount of chemically reactive etchant is reduced from that used in the first etchback and a plasma species is added to provide additional physical bombardment, in an isotropic etch of the substrate surface surrounding the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.