Method for forming a refractory-metal-silicide layer in a semiconductor device
US6548421B1 · kind B1 · utility
1Cited by
6References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 28, 2000 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Apr 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a silicide of a metal with high-melting-point in a semiconductor device includes the step of removing a higher-density impurity area which acts for prevention of refractory-metal-silicification of diffused regions between the steps of implanting impurities to form an impurity-implanted region and annealing for refractory-metal-silicification of the diffused layer. The refractory-metal-silicification of the diffused regions proceeds smoothly to thereby prevent degradation of the initial gate withstand voltage and a higher sheet resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.