Method for improving a quality of dielectric layer and semiconductor device
US6548426B1 · kind B1 · utility
2Cited by
4References
7Claims
0Family size
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Key dates
| Filing date | Jul 25, 2000 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Sep 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method for improving film quality of an insulating film, which includes the steps of forming a silicon oxide film on a substrate, and heating the silicon oxide film by contacting an exposed surface of the silicon oxide film with a steam-containing atmosphere after the silicon oxide film is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.