Semiconductor device formed of single crystal grains in a grid pattern
US6548830B1 · kind B1 · utility
71Cited by
12References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2000 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Jul 14, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24372
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising a source/drain region and a channel region formed in a silicon thin film composed of a group of silicon single crystal grains which are each approximately rectangular-shaped and which are arranged in a grid pattern on the base body, where a selected orientation of the silicon single crystal grains to the surface of the base body is approximately the <100> direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.