Capacitor having a structure capable of restraining deterioration of dielectric film, semiconductor device having the capacitor and method of manufacturing the same
US6548844B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2000 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Jun 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/48
Abstract
A semiconductor device having a structure capable of restraining deterioration of a dielectric film of a capacitor even when annealing is performed in a hydrogen-containing atmosphere. This semiconductor device includes one electrode or a plurality of dispersion electrodes formed in a dispersed manner above a semiconductor substrate, and a plate electrode commonly facing the one electrode or dispersion electrodes via respective dielectric films. This plate electrode includes a lower conductive layer formed on the dielectric films, a barrier layer formed on the lower conductive layer and an upper conductive layer formed on the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.