Magnetic yoke structures in MRAM devices to reduce programming power consumption and a method to make the same
US6548849B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2002 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Jan 31, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An MRAM device includes a substrate; plural conductive lines, including a bit line and a word line; and a MTJ stack including a pair of magnetic yoke structures, wherein each of said yoke structures surrounds a conductive line. A method of fabricating a magnetic yoke in an MRAM structure includes preparing a substrate; forming a first conductive line on the substrate; fabricating a MTJ stack, including fabricating a first magnetic yoke structure about the first conductive line; forming a second conductive line on the MTJ stack; fabricating a second magnetic yoke about the second conductive line; depositing a layer of oxide on the structure; and metallizing the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.