Power transistor cell

US6548882B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Peter Zwicknagl · Stuttgart, DE
• Peter Baureis · Kronach, DE
• Jan Müller · Hamburg, DE

Key dates

• Filing date: Feb 8, 2000
• Grant date: Apr 15, 2003
• Expiry date: Feb 8, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power transistor cell includes an air bridge and a plurality of individual transistors. Each of the plurality of individual transistors has at least one separate connection contact. Each of the at least one separate connection contact of the plurality of individual transistors is thermally conductively connected to one another through the air bridge forming air bridge connections, which define a contact plane. A surface of the contact plane that contains each connection path between two of the air bridge connections defines a convex region. The air bridge is formed to have, in the contact plane, dimensions that exceed a smallest convex region containing all of the air bridge connections in all directions of the air bridge. Each of the plurality of power transistor cells can be respectively thermally conductively connected to one another through the air bridge to form a block of power transistor cells. The air bridge has a dimension that significantly exceeds the length of the contact fingers in the longitudinal direction of the contact fingers, so that components of the air bridge that are present at the sides of a row of contact fingers can be mounted on metallic connection surf…