Low k dielectric insulator and method of forming semiconductor circuit structures
US6548892B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A porous insulator material and method of manufacturing. The material comprises oxygen, silicon and hydrogen characterized by a density less than 2 g/cc. Alternately, the porous insulator material is characterized by a refractive index less than 1.45 for light at a wavelength between 633 nm and 673 nm, or by a Young's modulus less than 45 GPa. A method for manufacturing a semiconductor device includes providing a semiconductor layer with an upper surface for device formation and forming multiple levels of interconnect over the semiconductor layer, each level including a plurality of members. The members are electrically isolated from other members by decomposition of TEOS to form a porous layer between at least some of the members.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.