External connection terminal and semiconductor device
US6548898B2 · kind B2 · utility
61Cited by
5References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2001 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Jul 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure in which a phosphorus-nickel layer, a rich phosphorus nickel layer that contains phosphorus or boron higher than this phosphorus-nickel layer, a nickel-tin ally layer, a tin-rich tin alloy layer, and a tin alloy solder layer are formed in sequence on an electrode. Accordingly, adhesiveness between a metal pattern used as the electrode, the wiring, or the pad and the solder can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.