Method for reducing a metal seam in an interconnect structure and a device manufactured thereby
US6548906B2 · kind B2 · utility
1Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2001 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Aug 22, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of manufacturing an interconnect structure. The method may include forming a nucleation layer, including a first metal, over a barrier layer and within an opening formed in a dielectric layer, forming an intermediate layer, including a second metal such as titanium nitride, over the nucleation layer and within the opening, and forming a plug portion layer, including the first metal, over the intermediate layer and within the opening. The first metal may be tungsten and the second metal may be a titanium nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.