Exposure apparatus and method
US6549271B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2002 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Sep 20, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70866
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A projection exposure method for exposing a substrate through a projection optical system with a predetermined pattern formed on a mask. The method includes the steps of calculating an amount of lateral variation of a pattern image in a direction perpendicular to an optical axis of the projection optical system, determining a distortion produced solely by the projection optical system, obtaining a total expected distortion by a summation of the distortion produced solely by the projection optical system and the calculated variation of the positions at which the image of the pattern of the mask is formed, and exposing the substrate while partially correcting the positions at which the image of the pattern of the mask is formed through the projection optical system based on the total expected distortion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.