Vertical-cavity surface-emitting laser with bottom dielectric distributed bragg reflector
US6549556B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2001 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Nov 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18377
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A metal bonded vertical-cavity surface-emitting laser (VCSEL) structure with a bottom dielectric distributed Bragg reflector (DBR) mirror, and method for fabricating the VCSEL structure. The VCSEL structure consists a metal bonding layer disposed on a submount at a bottom side of the metal bonding layer; a bottom cavity mirror comprising a bottom dielectric distributed Bragg reflector (DBR) disposed within the metal bonding layer, the bottom dielectric DBR having a reflectance band including the lasing wavelength; a bottom current-spreading layer disposed on said bottom dielectric DBR and on a substantially flat, annular top surface of said metal bonding layer; a semiconductor active region disposed on the bottom current-spreading layer, said active region capable of stimulated emission at the lasing wavelength; and a top cavity mirror disposed above the active region and having a reflectance band including the lasing wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.