Jun Zheng
105Patents
13h-index
73Co-inventors
89Inventor score
Filing activity: Nov 30, 1999 → Nov 18, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6373111B1 | Work function tuning for MOSFET gate electrodes | Electricity | 106 | Expired |
| US6549556B1 | Vertical-cavity surface-emitting laser with bottom dielectric distributed bragg reflector | Electricity | 34 | Expired |
| US6859481B2 | Optically-pumped multiple-quantum well active region with improved distribution of optical pumping power | Electricity | 34 | Expired |
| US6696333B1 | Method of making integrated circuit with MOSFETs having bi-layer metal gate electrodes | Electricity | 29 | Expired |
| US7359591B2 | Electrical/optical integration scheme using direct copper bonding | Electricity | 21 | Active |
| US6608855B1 | Single-mode DBR laser with improved phase-shift section | Electricity | 20 | Expired |
| US6638773B1 | Method for fabricating single-mode DBR laser with improved yield | Electricity | 18 | Expired |
| US10023782B2 | Salt-tolerant, thermally-stable rheology modifiers | Chemistry; Metallurgy | 17 | Active |
| US6794232B2 | Method of making MOSFET gate electrodes with tuned work function | Electricity | 16 | Expired |
| US6795478B2 | VCSEL with antiguide current confinement layer | Electricity | 15 | Expired |
| US6879009B2 | Integrated circuit with MOSFETS having bi-layer metal gate electrodes | Electricity | 14 | Expired |
| US6819839B2 | Tapered waveguide photodetector apparatus and methods | Physics | 14 | Expired |
| US6790731B2 | Method for tuning a work function for MOSFET gate electrodes | Electricity | 13 | Expired |
| US6734443B2 | Apparatus and method for removing photomask contamination and controlling electrostatic discharge | Physics | 11 | Expired |
| US6697413B2 | Tunable vertical-cavity surface-emitting laser with tuning junction | Electricity | 10 | Expired |
| US9611416B2 | Salt-tolerant, thermally-stable rheology modifiers | Chemistry; Metallurgy | 10 | Active |
| US8410468B2 | Hollow GST structure with dielectric fill | Electricity | 10 | Active |
| US6669367B2 | Optical fiber with mirror for semiconductor laser | Electricity | 10 | Expired |
| US7212026B2 | Spin-orbital quantum cellular automata logic devices and systems | Electricity | 9 | Expired |
| US6856733B2 | 1xN fanout waveguide photodetector | Physics | 9 | Expired |
| US9640757B2 | Double self-aligned phase change memory device structure | Electricity | 8 | Active |
| US8330136B2 | High concentration nitrogen-containing germanium telluride based memory devices and processes of making | Electricity | 7 | Active |
| US6636544B2 | Overlapping wavelength-tunable vertical cavity surface-emitting laser (VCSEL) arrays | Electricity | 7 | Expired |
| US7978985B2 | Clipping correction system and method for correcting clipped signals in a receiver | Electricity | 6 | Active |
| US9190609B2 | Germanium antimony telluride materials and devices incorporating same | Electricity | 6 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.