Method for removing organic contaminants from a semiconductor surface

US6551409B1 · kind B1 · utility

Assignees

• INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW · BE
• Nederlandse Philips Bedrijven B.V. · NL

Inventors

• Stefan DeGendt · Wijnegem, BE
• Dirk Maarten Knotter · 's-Hertogenbosch, NL
• Marc Heyns · Linden, BE
• Marc Meuris · Keerbergen, BE
• Paul Mertens · Haacht, BE

Key dates

• Filing date: Sep 18, 1998
• Grant date: Apr 22, 2003
• Expiry date: Sep 18, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76814
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for removing organic contaminants from a semiconductor surface whereby the semiconductor is held in a tank and the tank is filled with a fluid such as a liquid or a gas. Organic contaminants, such as photoresist, photoresidue, and dry etched residue, occur in process steps of semiconductor fabrication and at times, require removal. The organic contaminants are removed from the semiconductor surface by holding the semiconductor inside a tank. The method is practiced using gas phase processing. The tank is filled with a gas mixture, comprising water vapor and ozone.