Plasma processing apparatus and method of processing
US6551444B2 · kind B2 · utility
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6References
8Claims
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Key dates
| Filing date | Apr 9, 2002 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Apr 9, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3299
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma processing apparatus and a method of plasma processing using the same obviate a problem in which an excessive amount of processing gas is supplied momentarily during an initial stage of the gas supply. In the process of supplying gas, a main controller outputs to a mass flow controller a flow-rate setting command signal preset for “zero flow” prior to opening a gas shut-off valve, which opens/closes a gas supply passage, and another flow-rate setting command signal set for “a specific flow rate” only after the gas shut-off valve is opened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.