Production of diaphragms over a cavity by grinding to reduce wafer thickness
US6551851B2 · kind B2 · utility
5Cited by
13References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2001 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Jun 18, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0146
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A method of manufacturing a diaphragm utilising a precision grinding technique after etching a cavity in a wafer. A technique for preventing distortion of the diaphragm based on use of a sacrificial layer of porous silicon is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.