Semiconductor device having bump electrodes and method of manufacturing the same
US6551854B2 · kind B2 · utility
3Cited by
11References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2001 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Mar 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a bonding layer which consists of an intermetallic compound and is positioned between a first electrode and a bump electrode. The bump electrode is mainly made of Au. The intermetallic compound of the bonding layer consist of Au of the bump electrode and a low melting metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.