Wafer adhesive for semiconductor dry etch applications
US6551905B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2000 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Oct 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for backside processing a semiconductor wafer (10) including applying a polymer based protective coating (16) on the wafer, depositing a barrier layer of ceramic (18) on the protective coating, and coating the ceramic layer with a thermoplastic based adhesive (20). Thereafter, the wafer (10) is bonded to a perforated substrate (22) and then lapped and polished to a desired thickness and patterned with an etch mask. A high temperature plasma etching process is then used to etch via holes in the wafer (10). After etching and subsequent backside processing, the adhesive layer (20) is dissolved in acetone to separate the wafer (10) from the substrate (22). The protective coating (16) is then dissolved with a solvent to separate the ceramic layer (18) from the finished wafer (10).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.