Method for producing Schottky diodes and Schottky diodes
US6551911B1 · kind B1 · utility
1Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2000 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Jan 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
A method for producing Schottky diodes having a protective ring in an edge region of a Schottky contact. The protective ring is produced by a protective ring material that is deposited onto a surface of a semiconductor layer, which surface is provided with a patterned masking layer beforehand, and the protective ring material subsequently being siliconized. In this case, the protective ring material constitutes a metal, in particular a high barrier metal, which has, in particular, platinum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.