Etching an organic material layer, particularly for producing interconnections of the damascene type
US6551930B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2000 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Jun 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching an organic dielectric material layer includes depositing an inorganic barrier layer on the organic dielectric material layer, and depositing an inorganic masking layer on the inorganic barrier layer. A masking resin layer is deposited on the inorganic masking layer. The method further includes patterning the masking resin layer and etching through the inorganic masking layer to expose the inorganic barrier layer. Remaining portions of the masking resin layer are removed, and the exposed inorganic barrier layer is etched to expose the organic dielectric material layer. The method further includes removing remaining portions of the inorganic masking layer, and etching the exposed organic dielectric material layer while using the inorganic barrier layer as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.