Wet clean of organic silicate glass films
US6551943B1 · kind B1 · utility
6Cited by
6References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A post-etch clean up process for OSG. After the trench (112)/via (114) etch in a dual damascene process, a wet chemistry comprising HF and H2O2 is used to remove residues without etching or damaging the OSG film in the ILD (108) or IMD (110).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.