Binary non-crystalline oxide analogs of silicon dioxide for use in gate dielectrics
US6552403B1 · kind B1 · utility
4Cited by
5References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 5, 1999 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Nov 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention generally relates to oxides that may be used in conjunction with integrated circuit devices. The oxides are non-crystalline. The oxides are represented by the formula: ABO4, wherein A is an element selected form Group IIIA of the periodic table; and B is an element selected form Group VB of the periodic table. The oxides may be employed in field effect transistors as tin gate insulating layers having high dielectric constants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.