Gerald Lucovsky
6Patents
4h-index
6Co-inventors
50Inventor score
Filing activity: Jul 20, 1989 → Jul 9, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5255070A | Method for determining interface properties of semiconductor materials by photoreflectance | Physics | 12 | Expired |
| US7507629B2 | Semiconductor devices having an interfacial dielectric layer and related methods | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6787861B2 | Non-crystalline oxides for use in microelectronic, optical, and other applications | Electricity | 6 | Expired |
| US6552403B1 | Binary non-crystalline oxide analogs of silicon dioxide for use in gate dielectrics | Electricity | 4 | Expired |
| US6686264B2 | Methods of forming binary noncrystalline oxide analogs of silicon dioxide | Electricity | 2 | Expired |
| US9698454B1 | High power RF window deposition apparatus, method, and device | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.