Reduction of plasma edge effect on plasma enhanced CVD processes
US6553932B2 · kind B2 · utility
27Cited by
3References
58Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2001 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | May 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An appparatus for confining plasma within a process zone of a substrate processing chamber. In one aspect, an apparatus comprises an annular member having an upper mounting surface, an inner confinement wall, and an outer confinement wall. The apparatus is disposed on or otherwise connected to a gas distribution assembly of the processing chamber to prevent plasma edge effects on the surface of a substrate. The apparatus provides a plasma choke aperture that reduces the volume of the process zone around the periphery of the substrate thereby eliminating uneven deposition of material around the edge of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.