Process for fabricating a field-effect transistor with a buried Mott material oxide channel

US6555393B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Alejandro G. Schrott · New York, US
• James Misewich · Peekskill, US
• Bruce A. Scott · Pleasantville, US

Key dates

• Filing date: Aug 24, 2001
• Grant date: Apr 29, 2003
• Expiry date: Aug 24, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N99/03

Abstract

A structure and method of forming an integrated circuit (e.g., field effect transistor) having a buried Mott-insulated oxide channel includes depositing source and drain electrodes over a substrate forming a Mott transition channel layer over the substrate and electrodes, forming an insulator layer over the Mott transition channel layer, forming source and drain contacts through the insulator layer (such that the source and drain contacts are electrically connected to the Mott transition channel layer) and forming a gate electrode over the insulator layer between the source and drain contacts.