Method for forming a semiconductor device having a metal substrate
US6555405B2 · kind B2 · utility
82Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2001 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Aug 21, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming a semiconductor device with a metal substrate. The method includes providing at least one semiconductor substrate; forming at least one semiconductor layer on the semiconductor substrate; forming the metal substrate on the semiconductor substrate and then removing the semiconductor substrate. The metal substrate has advantages of high thermal and electrical conductivity that can improve the reliability and lifetime of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.