Method of making air gaps copper interconnect
US6555467B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2001 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Sep 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An inter-level insulator structure is provided having an effective insulator dielectric constant approaching 1. An embodiment of the inter-level insulator comprises a first metal layer comprising a first plurality of metal lines; a second metal layer comprising a second plurality of metal lines, and at least one via connected to the first metal layer; and an air gap interposed between the first metal layer and the second metal layer. In one embodiment, the air gap is also present between metal lines on either metal layer, such that air gaps act as intra-level as well as inter-level insulators. A method is also provided to deposit and pattern a sacrificial polymer, and form metal layers. The sacrificial polymer is capable of being decomposed to become air gaps during annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.