Silicon carbide as a stop layer in chemical mechanical polishing for isolation dielectric
US6555476B1 · kind B1 · utility
30Cited by
12References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1998 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Dec 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon carbide is used for a hardmask for the isolation dielectric etch and also serves as an etch stop for chemical-mechanical polishing. Alternatively, silicon carbonitride or silicon carboxide can be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.