Method for preventing Cu CMP corrosion
US6555477B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2002 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | May 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02071
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preventing or reducing corrosion of copper containing semiconductor features during chemical mechanical polishing (CMP) including providing a semiconductor wafer polishing surface including a copper layer overlying a copper filled anisotropically etched feature; polishing the semiconductor wafer polishing surface according to a first CMP process to remove at least a portion the copper layer to reveal a portion of an underlying barrier/adhesion layer; polishing the semiconductor wafer polishing surface according to a second CMP process including applying a neutralizing solution; polishing the semiconductor wafer polishing surface according to a third CMP process including applying a copper corrosion inhibitor solution; and, polishing the semiconductor wafer polishing surface according to at least a fourth CMP process to remove a remaining portion of the underlying barrier/adhesion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.