Bipolar transistor having an emitter comprised of a semi-insulating material
US6555852B1 · kind B1 · utility
2Cited by
6References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 17, 2002 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Jan 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
The present invention provides a bipolar transistor having a collector located in a semiconductor substrate having a given bandgap, and a base in contact with the collector. The base has a bandgap less than the bandgap of the substrate. In addition, the bipolar transistor further includes an emitter located over the base, where the emitter has a bandgap greater than the bandgap of the substrate. A method of forming a bipolar transistor, and an integrated circuit incorporating the bipolar transistor or the method, are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.