Lateral power MOSFET for high switching speeds
US6555883B1 · kind B1 · utility
46Cited by
2References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 29, 2001 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Oct 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate structure in which the insulated gate is coupled to the gate electrode through contacts at a plurality of locations. The source electrode includes first and second segments. The first segment is interposed between the drain electrode and the gate electrode and acts as a field plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.