Semiconductor device including eutectic bonding portion and method for manufacturing the same
US6555901B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 1997 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Sep 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/16235
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A sensing element is formed on a silicon (Si) substrate and covered with a cap. The cap has a leg portion having a titanium layer and a gold layer formed in that order on the lower surface thereof. The silicon substrate has an Si bonding frame at a position corresponding to the leg portion. When bonding the Si bonding frame of the silicon substrate and the leg portion of the cap, the titanium layer deoxidizes a naturally oxidized silicon layer formed on the Si bonding frame, whereby the silicon substrate and the cap can be uniformly bonded together with an Au/Si eutectic portion interposed therebetween. In this case, the Au/Si eutectic portion includes a titanium oxide accompanying the deoxidization of the naturally oxidized silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.