Semiconductor device and method of manufacturing interconnections thereof using copper and tungsten in predetermined ratios
US6555911B1 · kind B1 · utility
3Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2000 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Nov 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a plurality of interconnection layers includes signal lines formed of copper according to a single damascene process, vias formed of tungsten beneath the signal lines according to a single damascene process, and power and ground lines and vias therebeneath formed of copper according to a dual damascene process. Since copper has a better heat radiating capability than tungsten, the vias in all the layers have a better heat radiating capability than those formed of tungsten.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.