Acoustic wave device and process for forming the same
US6555946B1 · kind B1 · utility
28Cited by
347References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2000 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Jul 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/079
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
High quality epitaxial layers of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.