Method of photolithographic critical dimension control by using reticle measurements in a control algorithm
US6557163B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2001 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Nov 30, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70558
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of implementing a new reticle for manufacturing semiconductors on a wafer which involves performing measurements on the reticle and assigning an initial exposure dose by using a predetermined algorithm. The exposure control system utilizes reticle CD data for automatically calculating reticle exposure offset values, i.e. reticle factors. A correlation of reticle size deviations to calculated reticle factors is used to derive a reticle factor for the new reticle. The derived reticle factor is then used to predict an initial exposure condition for the new reticle which is applied to the lithography tool for achieving a wafer design dimension.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.