Patent · US Expired

Perforated work piece, and method for producing it

US6558770B1 · kind B1 · utility

7Cited by

6References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Volker Lehmann · Hersbruck, DE
Hans Reisinger · Grünwald, DE
Hermann Wendt · Grasbrunn, DE
Reinhard Stengel · Stadtbergen, DE
Gerrit Lange · Denzlingen, DE
Stefan Ottow · Dresden, DE

Key dates

Filing date	Nov 8, 2000
Grant date	May 6, 2003
Priority date	—
Expiry date	Apr 24, 2021

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/24331
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A substrate made from silicon has a first region and a second region. Through pores are formed in the first region. Pores that do not traverse the substrate are provided in the second region. The production of the work piece is performed with the aid of electrochemical etching of the pores. The entire surface of the substrate is covered with a mask layer that is structured photolithographically on the rear of the substrate. The bottoms of the pores in the second region are etched clear, preferably using KOH.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.