Semiconductor device and method of manufacturing the same
US6558993B2 · kind B2 · utility
17Cited by
11References
35Claims
0Family size
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Key dates
| Filing date | May 17, 2001 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | Jul 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6721
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a semiconductor device using a TFT structure of high reliability.A gate electrode of a TFT includes a first conductive layer, a second conductive layer, and a third conductive layer. An LDD region has a part which overlaps the gate electrode via a gate insulating film and a part which does not overlap the gate electrode. As a result, this can prevent the deterioration when the TFT is on and can reduce a leakage current when the TFT is off.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.