Method of producing a ferroelectric semiconductor memory

US6559003B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Walter Hartner · Munich, DE
• Gunther Schindler · Hersbruck, DE
• Marcus Kastner · Ottobrunn, DE
• Christine Dehm · Koblenzer Straße, DE

Key dates

• Filing date: Jan 3, 2001
• Grant date: May 6, 2003
• Expiry date: Apr 14, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/696

Abstract

A method of producing a ferroelectric semiconductor memory, includes forming a switching transistor on a semiconductor substrate, applying an insulating layer to the switching transistor and then forming a storage capacitor, with electrodes of platinum and a ferroelectric or paraelectric dielectric, on the insulating layer. In order to protect the dielectric from being penetrated by hydrogen during further process steps, a first barrier layer is embedded into the insulating layer and, after completion of the storage capacitor, a second barrier layer, which bonds with the first barrier layer, is deposited.