Method of fabricating a variable capacity diode having a hyperabrupt junction profile
US6559024B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2000 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | Mar 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/64
Abstract
A method of fabricating a hyperabrupt junction varactor diode structure comprises the steps of forming a non-uniformly doped n-type, hyperabrupt cathode region in a layer of semiconductor material and depositing, by ultra high vacuum chemical vapor deposition (UHVCVD), a p-type anode region onto a surface of the hyperabrupt cathode region. The deposition process is performed at relatively low temperature (i.e., below 600° C.). The anode region and the hyperabrupt cathode are joined at a junction between them such that an impurity concentration level of the hyperabrupt region increases in a direction toward the junction. During the forming step, n-type impurity ions are implanted at an implantation energy level substantially less than 300 keV, preferably between from about 10 to about 70 keV, with the implanted ions being thermally activated at a relatively low temperature (between from about 700 to about 800° C.).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.