Process for the structuring of a substrate

US6559060B2 · kind B2 · utility

Assignee

• Carl Zeiss Stiftung · DE

Inventors

• Uwe Hamm · Langenau, DE
• Markus Kasparek · Oberkirch, DE
• Oliver Jacobs · Oberkochen, DE

Key dates

• Filing date: Sep 13, 2001
• Grant date: May 6, 2003
• Expiry date: Oct 17, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32136
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for the structuring of a substrate with structures in the micrometer to nanometer range that does not involve the provision of gaseous fluoro-organic compounds is described. The process is carried out by means of reactive ion etching using a mask arranged on the substrate and a plasma as well as fluorine-containing organic compounds, which fluorine-containing organic compound(s) is/are provided in the form of solid polymers. A process for the etching of a coating on a substrate or the surface of a substrate is also described.