Integrated photodetector
US6559488B1 · kind B1 · utility
3Cited by
10References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2001 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | Apr 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A photodetector is integrated on a single semiconductor chip with bipolar transistors including a high speed poly-emitter vertical NPN transistor. The photodetector includes a silicon nitride layer serving as an anti-reflective film. The silicon nitride layer and oxide layers on opposite sides thereof insulate edges of a polysilicon emitter from the underlying transistor regions, minimizing the parasitic capacitance between the NPN transistor's emitter and achieving a high frequency response.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.