Semiconductor device
US6559502B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2001 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | May 18, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
Abstract
A semiconductor body has source and drain regions (4 and 5) spaced apart by a body region (6) and both meeting a surface (3a) of the semiconductor body. A gate structure (7) is provided within a trench (8) for controlling a conduction channel in a conduction channel accommodation portion (60) of the body region (6) extending along at least side walls (8a) of the trench (8) and between the source and drain regions (4 and 5). A voltage-sustaining zone (600) consisting of first regions (6) of the same conductivity type as the source and drain regions interposed with second regions (62) of the opposite conductivity type is provided such that the first regions (61) provide a path for majority charge carriers to the drain region (5) when the device is conducting. The dopant concentrations and dimensions of the first and second regions (61 and 62) are such that, when the voltage-sustaining zone is depleted of free charge carriers in one mode of operation, the space charge per unit area in the first and second regions (61 and 62) balances at least to the extent that the electric field resulting from the space charge is less than the critical field strength at which avalanche breakdown woul…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.