Modified pad for copper/low-k
US6560862B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2001 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | May 13, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to fabricate a bonding pad structure including the following steps. A substrate having a top metal layer and a passivation layer overlying the top metal layer is provided. The top metal layer being electrically connected to a lower metal layer by at least one metal via within a metal via area. The substrate includes a low-k dielectric layer at least between the lower metal layer and the top metal layer. The passivation layer is etched within the metal via area to form a trench exposing at least a portion of the top metal layer. A patterned, extended bonding pad is formed over the etched passivation layer and lining the trench. The extended bonding pad having a portion that extends over a peripheral planar area of the substrate adjacent the trench not within the metal via area. A wire bond is bonded to the extended bonding pad at the peripheral planar area portion to form the bonding pad structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.